Manufacturer | Part # | Datasheet | Description |
Leshan Radio Company |
LP4935T1G
|
385Kb / 5P |
P-Channel MOSFET Low RDS(on) trench technology.
|
STMicroelectronics |
AN4406
|
658Kb / 27P |
new ST super-junction technology ideal for resonant topologies
|
International Rectifier |
IRF7663PBF
|
151Kb / 7P |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
Leshan Radio Company |
LDP4098T1G
|
335Kb / 5P |
Dual P-Channel MOSFET Low RDS(on) trench technology.
|
LDP4953T1G
|
331Kb / 5P |
Dual P-Channel MOSFET Low RDS(on) trench technology.
|
SHENZHEN DOINGTER SEMIC... |
AOI4185
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
B9435
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
AO4441
|
659Kb / 4P |
P-Channel MOSFET uses advanced trench technology
|
DO3407A
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
AM4433P
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|