Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
MRFG35003N6A
|
260Kb / 11P |
Gallium Arsenide PHEMT
Rev. 2, 6/2009 |
Motorola, Inc |
MRFG35003M6T1
|
337Kb / 8P |
GALLIUM ARSENIDE PHEMT
|
MRFG35010MT1
|
300Kb / 8P |
Gallium Arsenide PHEMT
|
Freescale Semiconductor... |
MRFG35003NT1
|
100Kb / 5P |
RF Reference Design Library Gallium Arsenide PHEMT
|
MRFG35005ANT1
|
452Kb / 13P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
MRFG35003N6AT1
|
221Kb / 11P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
MRFG35010AN
|
1Mb / 25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
Freescale Semiconductor... |
MRFG35010MT1
|
516Kb / 12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
MRFG35010A
|
490Kb / 18P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Rev. 2, 12/2008 |
Freescale Semiconductor... |
MRFG35010NT1
|
173Kb / 10P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|