Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
BGY288
|
140Kb / 22P |
Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900
Rev. 01-2 February 2005 |
RF Micro Devices |
RF7161
|
871Kb / 20P |
QUAD-BAND GSM850/EGSM900/DCS1800/PCS1900 TRANSMIT MODULEThe
|
TriQuint Semiconductor |
TQ1422
|
132Kb / 6P |
GSM850/900 and DCS1800/PCS1900 Tx - Bandpass Filter
|
Mitsubishi Electric Sem... |
BA01303
|
88Kb / 3P |
Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module
|
Motorola, Inc |
MRFIC1818
|
216Kb / 8P |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MRFIC1817
|
232Kb / 8P |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
National Semiconductor ... |
LMX2604
|
268Kb / 14P |
Triple-band VCO for GSM900/DCS1800/PCS1900
|
RF Micro Devices |
RF3183
|
1Mb / 20P |
QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE
|
California Eastern Labs |
NE5500234
|
308Kb / 6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
RF Micro Devices |
RF3158
|
610Kb / 26P |
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
|