| Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
2SC3329
|
208Kb / 4P |
NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS)
|
|
2SA1349
|
223Kb / 3P |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL
|
|
2SC3381
|
211Kb / 3P |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS)
|
E-Tech Electronics LTD |
GBC338
|
189Kb / 3P |
The GBC338 is designed for drive and output-stages of audio amplifiers
|
|
GBC558
|
186Kb / 2P |
The GBC558 is designed for drive and output-stages of audio amplifiers
|
|
GBC546
|
167Kb / 2P |
The GBC546 is designed for drive and output-stages of audio amplifiers
|
|
GBC547
|
171Kb / 2P |
The GBC547 is designed for drive and output-stages of audio amplifiers
|
|
GBC557
|
186Kb / 2P |
The GBC557 is designed for drive and output-stages of audio amplifiers
|
|
GBC327
|
191Kb / 3P |
The GBC327 is designed for drive and output-stages of audio amplifiers
|
|
GBC556
|
185Kb / 2P |
The GBC556 is designed for drive and output-stages of audio amplifiers
|
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